Download 2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle PDF

By Michel Houssa, Athanasios Dimoulas, Alessandro Molle

ISBN-10: 1498704182

ISBN-13: 9781498704182

"Major advancements within the semiconductor are at the horizon by using second fabrics comparable to graphene and transition steel dichalcogenides for built-in circuits. This e-book presents the 1st entire therapy of the sector with an emphasis on functions in nanoelectronic units. Chapters are divided via the 3 significant households of such fabrics, masking graphene for analog and photonic Read more...

summary: "Major advancements within the semiconductor are at the horizon by using second fabrics similar to graphene and transition steel dichalcogenides for built-in circuits. This publication offers the 1st finished therapy of the sector with an emphasis on functions in nanoelectronic units. Chapters are divided through the 3 significant households of such fabrics, masking graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for common sense functions and novel fabrics akin to silicene, germanene, stanene and phosphorene"

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Roth, Nature 446, 60, 2007. 10. A. Fasolino, J. H. Los and M. I. Katsnelson, Nat. Mater. 6, 858, 2007. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos and A. A. Firsov, Nature 438, 197, 2005. 12. Y. Zhang, Y. Tan, H. L. Stormer and P. Kim, Nature 438, 201, 2005. 13. P. R. Wallace, Phys. Rev. 71, 622, 1947. 14. G. W. Semenoff, Phys. Rev. Lett. 53, 2449, 1984. 15. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, Rev.

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It is sometimes referred to as ‘zero-layer graphene’ as it represents the precursor to graphitisation. It serves as a buffer layer for growth of epitaxial graphene layers. The carbon layer which sits atop the buffer layer represents the first carbon layer which can be considered graphene, although it does not actually grow on top of the buffer layer. Instead, each layer of graphene that sits atop the buffer layer is the result of the desorption of Si atoms from the underlying SiC bilayers. Desorption of Si atoms from a total of three SiC bilayers is required to form a single layer of graphene, which can be understood simply by counting the number of C atoms needed to form a single-graphene monolayer and realising that a single SiC bilayer yields only 1/3 of the required C atoms.

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2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle


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