Download A Guide to Analog Asics by Paul M. Brown Jr. PDF

By Paul M. Brown Jr.

ISBN-10: 0121369706

ISBN-13: 9780121369705

ISBN-10: 032315476X

ISBN-13: 9780323154765

Software particular built-in circuits (ASICs), either analog and electronic, became normal method point bulding blocks. ASIC proprietors have tried to supply instruments that they wish will let quite green IC designers (i.e. platforms engineers) to layout refined customized built-in circuits. This philosophy has been extra winning in electronic know-how than in analog. considerably extra paintings is concerned with analog layout and much fewer automated instruments can be found. virtually each analog ASIC seller deals assorted semiconductor applied sciences, software units, documentation (usually missing intimately and never delivering the right kind history and guidelines), and ranging degrees of engineering help. the result's that many engineers who may use analog ASICs lack the technical info to take action. they don't seem to be yes while customized analog ICs are low in cost or which seller will top serve their wishes. furthermore, many engineers shouldn't have sufficient analog layout event, specially with built-in circuits. Consqeuently, many that may benefit from analog ASIC expertise don't use it whereas others have undesirable reviews that can have simply been refrained from.

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Extra resources for A Guide to Analog Asics

Example text

This increases the base cur­ rent for a given collector current, resulting in a relatively low beta. The emitter-to-collector current flow is lateral, as the name im­ plies. The purpose of the buried layer in a lateral pnp is to keep carriers from being collected by the reverse-biased, epi-substrate junction. Some collection, however, does occur at the epi-isolation junction. For this reason substrate contacts should be made in relatively close proximity to lateral pnps to prevent substrate currents from flowing long dis­ tances.

The epi forms the collector of npn transistors, the base of pnp transistors, and tubs for p-type resistors. The collector-base breakdown of npn transistors is determined largely by the thickness and sheet re­ sistivity of the epi. The epi is divided into islands by the third step called isolation. In this step (Figure 2-12), p-type dopants are diffused through the η epi into the starting material, forming isolated islands of η-type epi. The pn junction formed by the substrate (starting material) and isolation with the epi will always be kept reverse-biased during normal circuit operation.

0 b b Junction Capacitance The depletion region can be viewed as a dielectric with where ε = dielectric constant of free space ε = relative dielectric constant of silicon 0 Γ and the η-type and p-type materials as conductors. The result is that every junction is a voltage-variable capacitor since the distance be­ tween the capacitor plates (the depletion region) varies with the ap­ plied voltage V . 1 37 pn Junctions for abrupt junctions such as very shallow diffused junctions or those formed by ion implantation, and C, = for a linearly graded junction such as those formed by most standard diffusion processes, where 5 Cj is the junction capacitance dependant on V C is the junction capacitance with V = 0 j0 b b The npn collector-base junction will appear to be a graded junc­ tion for V < 1 V and an abrupt junction for larger reverse biases.

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